emh2408 no. a1170-1/7 features ? the emh2408 incorporates a n-channel mosfet that feature low on-resistance and ultrahigh-speed switching, thereby enabling high-density mounting ? 1.8v drive ? halogen free compliance speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain-to-source voltage v dss 20 v gate-to-source voltage v gss 12 v drain current (dc) i d 4a drain current (pulse) i dp pw 10 s, duty cycle 1% 16 a allowable power dissipation p d when mounted on ceramic substrate (900mm 2 0.8mm) 1unit 1.0 w total dissipation p t when mounted on ceramic substrate (900mm 2 0.8mm) 1.2 w channel temperature tch 150 c storage temperature tstg --55 to +150 c this product is designed to ?esd immunity < 200v * ?, so please take care when handling. * machine model package dimensions unit : mm (typ) 7045-006 ordering number : ena1170a 71112 tkim/90308pe tiim tc-00001558 sanyo semiconductors data sheet emh2408 n-channel silicon mosfet general-purpose switching device applications http:// semicon.sanyo.com/en/network product & package information ? package : emh8 ? jeita, jedec : - ? minimum packing quantity : 3,000 pcs./reel packing type : tl marking electrical connection 87 6 5 12 3 4 tl lh lot no. 1 : source1 2 : gate1 3 : source2 4 : gate2 5 : drain2 6 : drain2 7 : drain1 8 : drain1 sanyo : emh8 1 4 85 0.125 0.2 0.2 2.1 1.7 0.5 2.0 0.2 0.75 0.05 emh2408-tl-h
emh2408 no. a1170-2/7 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain-to-source breakdown voltage v (br)dss i d =1ma, v gs =0v 20 v zero-gate voltage drain current i dss v ds = 2 0v, v gs =0v 1 a gate-to-source leakage current i gss v gs =8v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 0.4 1.3 v forward transfer admittance | yfs | v ds =10v, i d = 2 a 2.0 3.4 s static drain-to-source on-state resistance r ds (on)1 i d =4a, v gs =4.5v 34 45 m r ds (on)2 i d =1a, v gs =2.5v 49 67 m r ds (on)3 i d =0.5a, v gs =1.8v 74 115 m input capacitance ciss v ds =10v, f=1mhz 345 pf output capacitance coss 67 pf reverse transfer capacitance crss 52 pf turn-on delay time t d (on) see speci ed test circuit. 9.2 ns rise time t r 60 ns turn-off delay time t d (off) 30 ns fall time t f 38 ns total gate charge qg v ds =10v, v gs =4.5v, i d =4a 4.7 nc gate-to-source charge qgs 0.65 nc gate-to-drain ?miller? charge qgd 1.6 nc diode forward voltage v sd i s =4a, v gs =0v 0.8 1.2 v switching time test circuit ordering information device package shipping memo emh2408-tl-h emh8 3,000pcs./reel pb free and halogen free pw=10 s d.c. 1% p. g 50 g s d i d =2a r l =5 emh2408 v dd =10v v out v in 4.5v 0v v in
emh2408 no. a1170-3/7 gate-to-source voltage, v gs -- v r ds (on) -- v gs drain-to-source voltage, v ds -- v i d -- v ds drain current, i d -- a gate-to-source voltage, v gs -- v i d -- v gs drain current, i d -- a ambient temperature, ta -- c r ds (on) -- ta drain current, i d -- a sw time -- i d switching time, sw time -- ns ciss, coss, crss -- v ds drain current, i d -- a diode forward voltage, v sd -- v source current, i s -- a i s -- v sd drain-to-source voltage, v ds -- v ciss, coss, crss -- pf static drain-to-source on-state resistance, r ds (on) -- m static drain-to-source on-state resistance, r ds (on) -- m it13500 0 0 4.0 2.0 2.5 3.0 3.5 1.0 0.7 0.8 0.9 0.5 0.1 0.2 0.3 0.4 0.6 it13499 1.5 1.0 0.5 4.5v 1.5v v gs =1.2v 0 0 5.0 2.0 1.0 0.5 1.5 2.5 1.5 0.5 3.0 4.0 4.5 3.5 2.0 1.0 v ds =10v 25 c --25 c ta=75 c 2.0v 2.5v 8.0v 160 8 it13501 110 0 20 10 30 40 50 60 70 80 90 100 it13502 110 100 0 it13503 0.01 0.1 it13504 0.1 0.3 0.5 1.1 0.7 0.9 0.01 0.1 7 5 3 2 7 5 3 2 2 1.0 7 5 3 02467 135 ta=25 c i d =0.5a 4a --60 --40 --20 0 20 40 80 120 60 100 140 80 90 70 60 50 40 30 10 20 0.1 23 57 2 1.0 357 2357 1.0 7 5 3 2 7 5 3 2 v ds =10v ta= --25 c 75 c 25 c --25 c 25 c ta=75 c v gs =0v v gs =1.8v, i d =0.5a 0.01 0.1 23 5 7 2 1.0 10 35 77 2 3 10 7 5 2 2 3 5 2 3 100 7 5 it13505 046 21214 810 161820 2 7 5 3 7 5 it13506 100 1000 2 3 f=1mhz v dd =10v v gs =4.5v t d (off) t r t f t d (on) ciss crss coss 35 1.8v 1a v gs =2.5v, i d =1a v gs =4.5v, i d =4a | y fs | -- i d forward transfer admittance, | y fs | -- s
emh2408 no. a1170-4/7 total gate charge, qg -- nc gate-to-source voltage, v gs -- v v gs -- qg drain-to-source voltage, v ds -- v drain current, i d -- a a s o ambient temperature, ta -- c p d -- ta allowable power dissipation, p d -- w 0 0 20 40 0.4 60 80 100 120 140 160 it13509 0.8 1.2 0.2 0.6 1.0 1.4 total dissipation 1unit when mounted on ceramic substrate (900mm 2 ? 0.8mm) it13508 2 3 5 7 2 0.1 3 5 7 2 1.0 3 2 3 5 7 10 0.01 0.1 0.01 57 23 2 1.0 57 32 0 0 5.0 1.0 1.5 0.5 4.5 it13507 2.5 2.0 4.0 3.0 3.5 4.5 1.0 0.5 1.5 2.0 2.5 3.5 3.0 4.0 v ds =10v i d =4a 100 s 1ms 10ms 100ms operation in this area is limited by r ds (on). i dp =16a i d =4a 10 57 323 pw 10 s dc operation (ta=25 c ) ta=25 c single pulse when mounted on ceramic substrate (900mm 2 ? 0.8mm) 1unit
emh2408 no. a1170-5/7 embossed taping speci cation emh2408-tl-h
emh2408 no. a1170-6/7 outline drawing land pattern example emh2408-tl-h mass (g) unit 0.008 * for reference mm unit: mm 0.4 0.3 0.5 1.9
emh2408 ps no. a1170-7/7 this catalog provides information as of july, 2012. speci cations and information herein are subject to change without notice. note on usage : since the emh2408 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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